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F3L75R12W1H3B27BOMA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1200V 45A 275W
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Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Published 2016
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 21
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X21
Number of Elements 4
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 275W
Transistor Application GENERAL PURPOSE
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 45A
Turn On Time 42 ns
Vce(on) (Max) @ Vge, Ic 1.7V @ 15V, 30A
Turn Off Time-Nom (toff) 385 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.4nF @ 25V

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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