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FD1000R33HE3KBPSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 3.3KV 1000A 9-pin IHVB190-3
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Physical

Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 9
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 9
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 2
Configuration Dual Brake Chopper
Element Configuration Dual
Case Connection ISOLATED
Power - Max 11500W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.3kV
Max Collector Current 1kA
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 3300V
Current - Collector (Ic) (Max) 1000A
Turn On Time 1150 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 1000A
Turn Off Time-Nom (toff) 3550 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 190nF @ 25V

Compliance

RoHS Status RoHS Compliant
Lead Free Contains Lead

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