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DF200R12W1H3B27BOMA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1200V 30A 375W
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Inventory: 6726
Minimum: 1
Total Price: USD $166.31
Unit Price: USD $166.313183
≥1 USD $166.313183
≥192 USD $66.360399
≥504 USD $64.143699
≥1008 USD $63.047756

Technical Details

Supply Chain

Factory Lead Time 16 Weeks

Physical

Mounting Type Chassis Mount
Package / Case Module
Surface Mount NO
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 18
Additional Feature UL APPROVED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X18
Number of Elements 2
Configuration 2 Independent
Case Connection ISOLATED
Power - Max 375W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 30A
Turn On Time 40 ns
Vce(on) (Max) @ Vge, Ic 1.3V @ 15V, 30A
Turn Off Time-Nom (toff) 475 ns
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 2nF @ 25V

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead
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