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MWI60-12T6K

IXYS
RoHS
RoHS RoHS compliant
Package E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description MOD IGBT SIXPACK RBSOA 1200V E1
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Technical Details

Supply Chain

Factory Lead Time 32 Weeks

Technical

Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2007
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 13
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 200W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MWI
Pin Count 24
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 200W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 58A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.53nF
Turn On Time 140 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 35A
Turn Off Time-Nom (toff) 610 ns
IGBT Type Trench
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.53nF @ 25V

Compliance

RoHS Status ROHS3 Compliant

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case E1
Number of Pins 1
Transistor Element Material SILICON
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