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APTGL60DDA120T3G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 80A 280W SP3
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Inventory: 6668
Minimum: 1
Total Price: USD $189.68
Unit Price: USD $189.682277
≥1 USD $189.682277
≥200 USD $75.684878
≥500 USD $73.155247
≥1000 USD $71.906286

Technical Details

Supply Chain

Factory Lead Time 36 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP3
Number of Pins 16

Technical

Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Configuration Dual Boost Chopper
Element Configuration Dual
Power - Max 280W
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 2.77nF
Vce(on) (Max) @ Vge, Ic 2.25V @ 15V, 50A
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 2.77nF @ 25V
VCEsat-Max 2.25 V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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