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MKI75-06A7

IXYS
RoHS
RoHS RoHS compliant
Package E2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description MOD IGBT H-BRIDGE 600V 90A E2
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Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Dimensions

Height 17mm
Length 107.5mm
Width 45mm

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 280W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MKI
JESD-30 Code R-XUFM-X14
Qualification Status Not Qualified
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 280W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.6V
Max Collector Current 90A
Current - Collector Cutoff (Max) 1.3mA
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 600V
Input Capacitance 3.2nF
Turn On Time 100 ns
Vce(on) (Max) @ Vge, Ic 2.6V @ 15V, 75A
Turn Off Time-Nom (toff) 310 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.2nF @ 25V

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E2
Transistor Element Material SILICON
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