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MIXA81H1200EH

IXYS
RoHS
RoHS RoHS compliant
Package E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT Modules IGBT Module H Bridge
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Inventory: 3011
Minimum: 1
Total Price: USD $213.97
Unit Price: USD $213.969484
≥1 USD $213.969484
≥200 USD $85.376049
≥500 USD $82.522461
≥1000 USD $81.112209

Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 14
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 390W
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X14
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 390W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 120A
Current - Collector Cutoff (Max) 200μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 77A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
VCEsat-Max 2.1 V

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