Operating Temperature -55°C~150°C TJ
Published 2009
Series BIMOSFET?
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Nickel (Ni)
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 625W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number IXB*75N170
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 625W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.1V
Max Collector Current 145A
Current - Collector Cutoff (Max) 25μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Input Capacitance 6.93nF
Turn On Time 277 ns
Vce(on) (Max) @ Vge, Ic 3.1V @ 15V, 75A
Turn Off Time-Nom (toff) 840 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.93nF @ 25V
Gate-Emitter Thr Voltage-Max 5.5V