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MDI150-12A4

IXYS
RoHS
RoHS RoHS compliant
Package Y3-DCB
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 1.2KV 180A 5-Pin Y3-DCB
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Technical Details

Supply Chain

Factory Lead Time 32 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case Y3-DCB
Number of Pins 5
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Packaging Bulk
Published 2000
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 760W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MDI
Pin Count 7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 760W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 180A
Current - Collector Cutoff (Max) 7.5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 6.6nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 100A
Turn Off Time-Nom (toff) 570 ns
IGBT Type NPT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 6.6nF @ 25V
VCEsat-Max 3 V

Dimensions

Height 30mm
Length 110mm
Width 62mm

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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