Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.1kW
Number of Elements 1
Configuration Half Bridge
Power - Max 1100W
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 360A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 225A
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V