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FF200R12KT3EHOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 1050W
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Inventory: 5149
Minimum: 1
Total Price: USD $313.79
Unit Price: USD $313.789928
≥1 USD $313.789928
≥200 USD $121.433272
≥500 USD $117.165297
≥1000 USD $115.057502

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Technical

Operating Temperature -40°C~125°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Case Connection ISOLATED
Power - Max 1050W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 295A
Current - Collector Cutoff (Max) 5mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 215 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 200A
Turn Off Time-Nom (toff) 680 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Physical

Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON

Alternative Model

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