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MIXA150W1200TEH
IXYSRoHS 
RoHS compliant
RoHS compliantPackage E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description
IGBT MODULE 1200V 220A 695W E3
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Inventory: 5330
Minimum: 1
Total Price: USD $444.08
Unit Price: USD $444.076215
≥1 USD $444.076215
≥200 USD $177.189903
≥500 USD $171.269052
≥1000 USD $168.342401
Technical Details
Physical
Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Transistor Element Material SILICON
Compliance
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Technical
Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 13
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 695W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 35
JESD-30 Code R-XUFM-X13
Qualification Status Not Qualified
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 695W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 220A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Turn On Time 110 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Turn Off Time-Nom (toff) 350 ns
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Alternative Model
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