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MKI80-06T6K

IXYS
RoHS
RoHS RoHS compliant
Package E1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description MOD IGBT H-BRIDGE 600V 89A E1
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Technical Details

Supply Chain

Factory Lead Time 26 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E1
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C TJ
Published 2012
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 210W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number MKI
Pin Count 24
JESD-30 Code R-XUFM-X10
Qualification Status Not Qualified
Number of Elements 4
Configuration Full Bridge Inverter
Case Connection ISOLATED
Power - Max 210W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.3V
Max Collector Current 89A
Current - Collector Cutoff (Max) 500μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 4.62nF
Turn On Time 50 ns
Vce(on) (Max) @ Vge, Ic 2.3V @ 15V, 75A
Turn Off Time-Nom (toff) 320 ns
IGBT Type Trench
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 4.62nF @ 25V

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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