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MKI100-12F8

IXYS
RoHS
RoHS RoHS compliant
Package E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description MOD IGBT H-BRIDGE 1200V 125A E3
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Inventory: 127
Minimum: 1
Total Price: USD $147.57
Unit Price: USD $147.57204
≥1 USD $147.57204

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Transistor Element Material SILICON

Compliance

RoHS Status ROHS3 Compliant

Technical

Operating Temperature -40°C~125°C TJ
Published 2005
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 21
Additional Feature LOW SATURATION VOLTAGE, FAST SWITCHING
Max Power Dissipation 640W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Base Part Number MKI
Pin Count 21
JESD-30 Code R-XUFM-X21
Number of Elements 4
Configuration Full Bridge Inverter
Power Dissipation 640W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.9V
Max Collector Current 125A
Current - Collector Cutoff (Max) 1.3mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 1.2kV
Input Capacitance 6.5nF
Turn On Time 190 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 100A
Turn Off Time-Nom (toff) 395 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 6.5nF @ 25V

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