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IFS75B12N3E4B31BOSA1

Infineon Technologies
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 1200V 150A 385W
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Technical Details

Supply Chain

Factory Lead Time 36 Weeks

Physical

Mount Base
Mounting Type Chassis Mount
Package / Case Module
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C
Published 2002
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 34
ECCN Code EAR99
Additional Feature UL RECOGNIZED
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code R-XUFM-X34
Number of Elements 6
Configuration Full Bridge
Case Connection ISOLATED
Power - Max 385W
Transistor Application POWER CONTROL
Halogen Free Not Halogen Free
Polarity/Channel Type N-CHANNEL
Input Standard
Current - Collector Cutoff (Max) 1mA
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 150A
Turn On Time 185 ns
Vce(on) (Max) @ Vge, Ic 2.15V @ 15V, 75A
Turn Off Time-Nom (toff) 570 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Input Capacitance (Cies) @ Vce 4.3nF @ 25V

Compliance

RoHS Status ROHS3 Compliant
Lead Free Contains Lead

Alternative Model

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