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MIEB101W1200EH

IXYS
RoHS
RoHS RoHS compliant
Package E3
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 183A 630W E3
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Inventory: 7690
Minimum: 1
Total Price: USD $376.01
Unit Price: USD $376.005042
≥1 USD $376.005042
≥200 USD $150.028431
≥500 USD $145.016042
≥1000 USD $142.538796

Technical Details

Supply Chain

Factory Lead Time 14 Weeks

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case E3
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~125°C TJ
Packaging Bulk
Published 2011
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 19
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 630W
Terminal Position UPPER
Terminal Form UNSPECIFIED
JESD-30 Code R-XUFM-X19
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 630W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 183A
Current - Collector Cutoff (Max) 300μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7.43nF
Turn On Time 175 ns
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 100A
Turn Off Time-Nom (toff) 700 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.43nF @ 25V

Compliance

RoHS Status ROHS3 Compliant
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