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MIXA600PF650TSF

IXYS
RoHS
RoHS RoHS compliant
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 650V 720A 1750W
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Technical Details

Supply Chain

Factory Lead Time 32 Weeks

Technical

Operating Temperature -40°C~175°C TJ
Published 2013
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.75kW
Number of Elements 1
Configuration Half Bridge
Power - Max 1750W
Input Standard
Collector Emitter Voltage (VCEO) 1.8V
Max Collector Current 720A
Current - Collector Cutoff (Max) 1.8mA
Collector Emitter Breakdown Voltage 650V
Vce(on) (Max) @ Vge, Ic 1.8V @ 15V, 600A
IGBT Type PT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module

Compliance

RoHS Status ROHS3 Compliant

Alternative Model

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