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GB35XF120K

Vishay Semiconductor Diodes Division
RoHS
/
Package ECONO2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description MODULE IGBT 1200V 35A ECONO2 6PK
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case ECONO2
Number of Pins 2
Transistor Element Material SILICON

Technical

Operating Temperature 150°C TJ
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
Additional Feature UL RECOGNIZED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 1.2kV
Max Power Dissipation 284W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 35A
Pin Count 17
JESD-30 Code R-XUFM-X17
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 284W
Transistor Application MOTOR CONTROL
Rise Time 35ns
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3V
Max Collector Current 50A
Current - Collector Cutoff (Max) 100μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 3.475nF
Turn On Time 85 ns
Vce(on) (Max) @ Vge, Ic 3V @ 15V, 50A
Turn Off Time-Nom (toff) 645 ns
IGBT Type NPT
NTC Thermistor No
Input Capacitance (Cies) @ Vce 3.475nF @ 30V

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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