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APTGT100SK120D1G

Microsemi Corporation
RoHS
/
Package D1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 150A 520W D1
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D1
Number of Pins 5
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ
Published 2010
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 520W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 520W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 150A
Current - Collector Cutoff (Max) 3mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7nF
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7nF @ 25V

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