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APTGT100A120D1G

Microsemi Corporation
RoHS
/
Package D1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE TRENCH PHASE LEG D1
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D1
Number of Pins 7

Technical

Published 2010
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 520W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 150A
Current - Collector Cutoff (Max) 3mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 7nF
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7nF @ 25V
VCEsat-Max 6.5 V

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Alternative Model

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