Published 2006
JESD-609 Code e1
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 12
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 690W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Peak Reflow Temperature (Cel) NOT SPECIFIED
Reach Compliance Code unknown
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X12
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 690W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 220A
Current - Collector Cutoff (Max) 350μA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 10.7nF
Turn On Time 335 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 150A
Turn Off Time-Nom (toff) 610 ns
IGBT Type NPT
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 10.7nF @ 25V