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APTGT100DH170G

Microsemi Corporation
RoHS
/
Package SP6
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1700V 150A 560W SP6
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Technical Details

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP6
Number of Pins 8
Supplier Device Package SP6

Technical

Operating Temperature -40°C~150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 560W
Configuration Asymmetrical Bridge
Element Configuration Dual
Power - Max 560W
Input Standard
Collector Emitter Voltage (VCEO) 1.7kV
Max Collector Current 150A
Current - Collector Cutoff (Max) 350μA
Collector Emitter Breakdown Voltage 1.7kV
Voltage - Collector Emitter Breakdown (Max) 1700V
Current - Collector (Ic) (Max) 150A
Input Capacitance 9nF
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 100A
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 9nF @ 25V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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