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APTGT200SK120D3G

Microsemi Corporation
RoHS
/
Package D-3 Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 300A 1050W D3
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Technical Details

Supply Chain

Factory Lead Time 22 Weeks

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case D-3 Module
Number of Pins 5
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ
Published 2008
JESD-609 Code e1
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Max Power Dissipation 1.05kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X7
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 1050W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 300A
Current - Collector Cutoff (Max) 6mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 14nF
Turn On Time 400 ns
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 200A
Turn Off Time-Nom (toff) 830 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 14nF @ 25V
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