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APTGT35A120D1G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package D1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 1200V 55A 205W D1
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D1
Supplier Device Package D1

Compliance

RoHS Status RoHS Compliant

Technical

Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Power Dissipation 205W
Configuration Half Bridge
Power - Max 205W
Input Standard
Collector Emitter Voltage (VCEO) 2.1V
Max Collector Current 55A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 55A
Input Capacitance 2.5nF
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 35A
IGBT Type Trench Field Stop
NTC Thermistor No
Input Capacitance (Cies) @ Vce 2.5nF @ 25V

Alternative Model

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