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APTGT580U60D4G

Microsemi Corporation
RoHS
/
Package D4
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 600V 760A 1600W D4
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case D4

Technical

Operating Temperature -40°C~175°C TJ
Published 2008
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 1.6kW
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 5
JESD-30 Code R-XUFM-X5
Number of Elements 1
Configuration Single
Power - Max 1600W
Input Standard
Collector Emitter Voltage (VCEO) 1.9V
Max Collector Current 760A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 37nF
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 600A
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 37nF @ 25V

Compliance

RoHS Status RoHS Compliant

Alternative Model

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