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CM200DY-12H

Powerex Inc.
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE, DUAL, 600V, 200A
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Inventory: 27
Minimum: 1
Total Price: USD $71.13
Unit Price: USD $71.127735
≥1 USD $71.127735
≥10 USD $58.36173
≥100 USD $56.5383
≥500 USD $54.713873
≥1000 USD $52.890443

Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Published 1998
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 5
HTS Code 8541.29.00.95
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 780W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
JESD-30 Code R-XUFM-X5
Number of Elements 2
Configuration Half Bridge
Element Configuration Dual
Power Dissipation 780W
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.8V
Max Collector Current 200A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 20nF
Turn On Time 750 ns
Vce(on) (Max) @ Vge, Ic 2.8V @ 15V, 200A
Turn Off Time-Nom (toff) 600 ns
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 20nF @ 10V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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