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CM200TU-12F

Powerex Inc.
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD 6PAC 600V 200A F SER
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 17
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Published 1999
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 17
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 590W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 6
Configuration Three Phase Inverter
Case Connection ISOLATED
Power - Max 590W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 2.2V
Max Collector Current 200A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 54nF
Vce(on) (Max) @ Vge, Ic 2.2V @ 15V, 200A
IGBT Type Trench
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 54nF @ 10V

Compliance

RoHS Status RoHS Compliant

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