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FF200R12KS4HOSA1

Infineon Technologies
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT Array & Module Transistor, N Channel, 275 A, 3.2 V, 1.4 kW, 1.2 kV, Module
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Pricing & Ordering
Inventory: 1540
Minimum: 1
Total Price: USD $78.01
Unit Price: USD $78.006327
≥1 USD $78.006327
≥10 USD $73.590882
≥100 USD $69.425356
≥500 USD $65.495619
≥1000 USD $61.788318

Technical Details

Supply Chain

Factory Lead Time 20 Weeks

Technical

Operating Temperature -40°C~125°C
Published 2002
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
ECCN Code EAR99
Additional Feature FAST
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 7
Number of Elements 2
Configuration 2 Independent
Element Configuration Dual
Power Dissipation 1.4kW
Case Connection ISOLATED
Power - Max 1400W
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 1.2kV
Max Collector Current 275A
Current - Collector Cutoff (Max) 5mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Collector Emitter Saturation Voltage 3.2V
Turn On Time 180 ns
Vce(on) (Max) @ Vge, Ic 3.7V @ 15V, 200A
Turn Off Time-Nom (toff) 590 ns
NTC Thermistor No
Input Capacitance (Cies) @ Vce 13nF @ 25V

Physical

Mount Screw
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON

Compliance

RoHS Status RoHS Compliant
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