Operating Temperature -55°C~150°C TJ
Published 1999
Series POWER MOS 7?
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 431W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Current Rating 130A
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 130A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 7.4nF
Turn On Time 84 ns
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 65A
Turn Off Time-Nom (toff) 219 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 7.4nF @ 25V
Gate-Emitter Thr Voltage-Max 6V