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APTGT50TL601G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description POWER MODULE IGBT 600V 50A SP1
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Inventory: 109
Minimum: 1
Total Price: USD $63.88
Unit Price: USD $63.87612
≥1 USD $63.87612
≥10 USD $37.7916

Technical Details

Supply Chain

Factory Lead Time 36 Weeks

Technical

Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 10
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X10
Number of Elements 4
Configuration Three Level Inverter
Case Connection ISOLATED
Power - Max 176W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
VCEsat-Max 1.9 V

Compliance

RoHS Status RoHS Compliant

Physical

Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 12
Transistor Element Material SILICON

Alternative Model

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