Operating Temperature -55°C~150°C TJ
Published 1999
Series POWER MOS 7?
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 4
Additional Feature LOW CONDUCTION LOSS
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 284W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 4
Number of Elements 1
Configuration Single
Case Connection ISOLATED
Power - Max 284W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 900V
Max Collector Current 68A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 900V
Input Capacitance 3.3nF
Turn On Time 43 ns
Vce(on) (Max) @ Vge, Ic 3.9V @ 15V, 40A
Turn Off Time-Nom (toff) 215 ns
IGBT Type PT
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.3nF @ 25V
VCEsat-Max 3.9 V