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CPV364M4U

Vishay Semiconductor Diodes Division
RoHS
/
Package 19-SIP (13 Leads), IMS-2
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MODULE 600V 20A 63W IMS-2
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Technical Details

Physical

Mount Surface Mount, Through Hole
Mounting Type Through Hole
Package / Case 19-SIP (13 Leads), IMS-2
Number of Pins 13
Supplier Device Package IMS-2

Compliance

Radiation Hardening No
REACH SVHC Unknown
RoHS Status Non-RoHS Compliant

Technical

Operating Temperature -40°C~150°C TJ
Published 1997
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Max Power Dissipation 63W
Base Part Number CPV364M4
Polarity Unidirectional
Configuration Three Phase Inverter
Element Configuration Single
Power - Max 63W
Max Reverse Leakage Current 1μA
Clamping Voltage 45.4V
Peak Pulse Current 66.1A
Reverse Standoff Voltage 26V
Peak Pulse Power 3kW
Direction Unidirectional
Test Current 1mA
Breakdown Voltage 28.9V
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 20A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 20A
Input Capacitance 2.1nF
Vce(on) (Max) @ Vge, Ic 1.84V @ 15V, 20A
NTC Thermistor No
Input Capacitance (Cies) @ Vce 2.1nF @ 30V
Min Breakdown Voltage 31.1V

Alternative Model

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