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APTGT50DH60T1G

Microsemi Corporation
RoHS
RoHS RoHS compliant
Package SP1
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description Trans IGBT Module N-CH 600V 80A 10-Pin Case SP-1
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Inventory: 4473
Minimum: 1
Total Price: USD $134.86
Unit Price: USD $134.857543
≥1 USD $134.857543
≥200 USD $53.810126
≥500 USD $52.011124
≥1000 USD $51.123342

Technical Details

Supply Chain

Factory Lead Time 36 Weeks

Technical

Operating Temperature -40°C~175°C TJ
Published 2012
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 9
ECCN Code EAR99
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 176W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Pin Count 12
JESD-30 Code R-XUFM-X9
Number of Elements 2
Configuration Asymmetrical Bridge
Element Configuration Dual
Case Connection ISOLATED
Power - Max 176W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 80A
Current - Collector Cutoff (Max) 250μA
Collector Emitter Breakdown Voltage 600V
Input Capacitance 3.15nF
Turn On Time 170 ns
Vce(on) (Max) @ Vge, Ic 1.9V @ 15V, 50A
Turn Off Time-Nom (toff) 310 ns
IGBT Type Trench Field Stop
NTC Thermistor Yes
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 3.15nF @ 25V
VCEsat-Max 1.9 V

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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