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BC847B-7-F

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description DIODES INC. - BC847B-7-F - Bipolar (BJT) Single Transistor, NPN, 45 V, 300 MHz, 300 mW, 100 mA, 330 hFE
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Inventory: 215060
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.12936
≥1 USD $0.12936
≥10 USD $0.091476
≥100 USD $0.049434
≥500 USD $0.038827
≥1000 USD $0.026962

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2012
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature HIGH RELIABILITY
Subcategory Other Transistors
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Frequency 300MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC847
Pin Count 3
Qualification Status Not Qualified
Number of Elements 1
Element Configuration Single
Power Dissipation 310mW
Transistor Application SWITCHING
Gain Bandwidth Product 300MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Current - Collector (Ic) (Max) 100mA
Transition Frequency 300MHz
Collector Emitter Saturation Voltage 90mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 6V
hFE Min 200
Max Junction Temperature (Tj) 150°C

Compliance

REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Dimensions

Height 1.1mm
Length 3.05mm
Width 1.4mm

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