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BC857C-7-F

Diodes Incorporated
RoHS
RoHS RoHS compliant
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description DIODES INC. - BC857C-7-F - Bipolar (BJT) Single Transistor, PNP, -45 V, 200 MHz, 300 mW, -100 mA, 600 hFE
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Inventory: 41814
Minimum: 1
Total Price: USD $0.13
Unit Price: USD $0.12936
≥1 USD $0.12936
≥10 USD $0.091476
≥100 USD $0.049434
≥500 USD $0.038827
≥1000 USD $0.026962

Technical Details

Supply Chain

Factory Lead Time 19 Weeks

Physical

Contact Plating Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Number of Pins 3
Weight 7.994566mg
Transistor Element Material SILICON

Technical

Operating Temperature -65°C~150°C TJ
Packaging Tape & Reel (TR)
Published 2008
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Termination SMD/SMT
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC -45V
Max Power Dissipation 300mW
Terminal Position DUAL
Terminal Form GULL WING
Peak Reflow Temperature (Cel) 260
Current Rating -100mA
Frequency 200MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number BC857C
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 350mW
Power - Max 300mW
Transistor Application SWITCHING
Gain Bandwidth Product 200MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 45V
Max Collector Current 100mA
DC Current Gain (hFE) (Min) @ Ic, Vce 420 @ 2mA 5V
Current - Collector Cutoff (Max) 15nA
Vce Saturation (Max) @ Ib, Ic 650mV @ 5mA, 100mA
Collector Emitter Breakdown Voltage 45V
Transition Frequency 200MHz
Collector Emitter Saturation Voltage -650mV
Max Breakdown Voltage 45V
Collector Base Voltage (VCBO) 50V
Emitter Base Voltage (VEBO) 5V
hFE Min 420

Dimensions

Height 1mm
Length 3.05mm
Width 1.4mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Alternative Model

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