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2N5885G

ON Semiconductor
RoHS
RoHS RoHS compliant
Package TO-204AA, TO-3
Category Discrete Semiconductor Products / Transistors - Bipolar (BJT) - Single
Description ON SEMICONDUCTOR - 2N5885G - Bipolar (BJT) Single Transistor, General Purpose, NPN, 60 V, 4 MHz, 200 W, 50 A, 4 hFE
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Inventory: 19028
Minimum: 1
Total Price: USD $1.03
Unit Price: USD $1.03341
≥1 USD $1.03341
≥10 USD $0.847875
≥100 USD $0.82194
≥500 USD $0.795008
≥1000 USD $0.769073

Technical Details

Supply Chain

Factory Lead Time 2 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)

Physical

Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-204AA, TO-3
Surface Mount NO
Number of Pins 2
Weight 4.535924g
Transistor Element Material SILICON

Dimensions

Height 8.51mm
Length 39.37mm
Width 26.67mm

Compliance

Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free

Technical

Operating Temperature -65°C~200°C TJ
Packaging Tray
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 200W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Peak Reflow Temperature (Cel) 260
Current Rating 600mA
Frequency 4MHz
Time@Peak Reflow Temperature-Max (s) 40
Base Part Number 2N5885
Pin Count 2
Number of Elements 1
Element Configuration Single
Power Dissipation 200W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 4MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 25A
DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10A 4V
Current - Collector Cutoff (Max) 2mA
Vce Saturation (Max) @ Ib, Ic 4V @ 6.25A, 25A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 4MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 20

Alternative Model

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