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D711N68TXPSA1

Infineon Technologies
RoHS
/
Package DO-200AB, B-PUK
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 6.8KV 1070A
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Technical Details

Supply Chain

Factory Lead Time 36 Weeks

Physical

Mount Screw
Mounting Type Chassis Mount
Package / Case DO-200AB, B-PUK
Number of Pins 2
Diode Element Material SILICON

Compliance

RoHS Status RoHS Compliant
Lead Free Lead Free

Technical

Packaging Bulk
Published 2014
Part Status Active
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 2
ECCN Code EAR99
Max Operating Temperature 160°C
Min Operating Temperature -40°C
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 50mA @ 6800V
Voltage - Forward (Vf) (Max) @ If 1.9V @ 1200A
Forward Current 1.05kA
Operating Temperature - Junction -40°C~160°C
Max Surge Current 12.5kA
Output Current-Max 1050A
Application GENERAL PURPOSE
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 6800V
Current - Average Rectified (Io) 1070A
Number of Phases 1
Peak Reverse Current 50mA
Max Repetitive Reverse Voltage (Vrrm) 6.8kV
Peak Non-Repetitive Surge Current 12.5kA
Reverse Voltage 6.8kV
Max Forward Surge Current (Ifsm) 10.5kA

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