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JANTXV1N5190

Microsemi Corporation
RoHS
/
Package B, Axial
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 600V 3A AXIAL
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Technical Details

Supply Chain

Factory Lead Time 14 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case B, Axial
Diode Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/297
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb) - with Nickel (Ni) barrier
Max Operating Temperature 175°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Form WIRE
Pin Count 2
Reference Standard MIL-19500/424A
JESD-30 Code O-XALF-W2
Qualification Status Qualified
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 600V
Voltage - Forward (Vf) (Max) @ If 1.5V @ 9A
Case Connection ISOLATED
Forward Current 3A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 3A
Application FAST RECOVERY POWER
Number of Phases 1
Reverse Recovery Time 400 ns
Peak Reverse Current 2μA
Max Repetitive Reverse Voltage (Vrrm) 600V
Peak Non-Repetitive Surge Current 80A

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