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SIDC01D120H6

Infineon Technologies
RoHS
/
Package Die
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 1.2KV 600MA WAFER
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Diode Element Material SILICON

Technical

Packaging Bulk
Published 2005
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code 8541.10.00.40
Subcategory Rectifier Diodes
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
JESD-30 Code O-XUUC-N
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 27μA @ 1200V
Output Current 600mA
Voltage - Forward (Vf) (Max) @ If 1.6V @ 600mA
Operating Temperature - Junction -55°C~150°C
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 600mA DC
Max Reverse Voltage (DC) 1.2kV
Average Rectified Current 600mA

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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