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SIDC06D120H6X1SA4

Infineon Technologies
RoHS
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Package Die
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 1.2KV 7.5A WAFER
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Technical Details

Physical

Mounting Type Surface Mount
Package / Case Die
Surface Mount YES
Diode Element Material SILICON

Technical

Packaging Bulk
JESD-609 Code e3
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
Terminal Finish MATTE TIN
HTS Code 8541.10.00.40
Terminal Position UPPER
Terminal Form NO LEAD
Pin Count 1
JESD-30 Code S-XUUC-N1
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 27μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.6V @ 7.5A
Operating Temperature - Junction -55°C~150°C
Output Current-Max 7.5A
Application FAST SOFT RECOVERY
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 7.5A DC
Number of Phases 1
Rep Pk Reverse Voltage-Max 1200V

Compliance

RoHS Status Non-RoHS Compliant

Alternative Model

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