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SIDC81D120E6X1SA4

Infineon Technologies
RoHS
/
Package Die
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 1.2KV 100A WAFER
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case Die
Diode Element Material SILICON

Technical

Packaging Bulk
Published 2005
Pbfree Code no
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 1
ECCN Code EAR99
HTS Code 8541.10.00.40
Terminal Position UPPER
Terminal Form NO LEAD
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 1
JESD-30 Code S-XUUC-N1
Qualification Status Not Qualified
Operating Temperature (Max) 150°C
Number of Elements 1
Configuration SINGLE
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 27μA @ 1200V
Output Current 100A
Voltage - Forward (Vf) (Max) @ If 1.9V @ 100A
Operating Temperature - Junction -55°C~150°C
Application FAST SOFT RECOVERY
Halogen Free Halogen Free
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 100A DC
Drain to Source Voltage (Vdss) 1.2kV
Max Reverse Voltage (DC) 1.2kV
Average Rectified Current 100A
Number of Phases 1
Max Dual Supply Voltage 1.2kV

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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