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JANTXV1N6629US

Microsemi Corporation
RoHS
/
Package SQ-MELF, E
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 800V 1.4A D5B
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Inventory: 3009
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Technical Details

Supply Chain

Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)

Physical

Contact Plating Lead, Tin
Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, E
Number of Pins 2
Diode Element Material SILICON

Technical

Packaging Bulk
Published 1997
JESD-609 Code e0
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 150°C
Min Operating Temperature -65°C
Additional Feature METALLURGICALLY BONDED
HTS Code 8541.10.00.80
Technology AVALANCHE
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) NOT SPECIFIED
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 2
Reference Standard MIL-19500/590F
Qualification Status Qualified
Number of Elements 1
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 2μA @ 800V
Voltage - Forward (Vf) (Max) @ If 1.4V @ 1.4A
Case Connection ISOLATED
Forward Current 1.4A
Operating Temperature - Junction -65°C~150°C
Output Current-Max 3A
Application ULTRA FAST RECOVERY POWER
Max Reverse Voltage (DC) 800V
Average Rectified Current 1.4A
Number of Phases 1
Reverse Recovery Time 60 ns
Max Repetitive Reverse Voltage (Vrrm) 880V
Capacitance @ Vr, F 40pF @ 10V 1MHz

Compliance

RoHS Status Non-RoHS Compliant
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