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CLH01(TE16L,Q)

Toshiba Semiconductor and Storage
RoHS
/
Package L-FLAT?
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 200V 3A L-FLAT
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case L-FLAT?
Number of Pins 2

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Technical

Packaging Bulk
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Element Configuration Single
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 200V
Voltage - Forward (Vf) (Max) @ If 0.98V @ 3A
Forward Current 3A
Operating Temperature - Junction -40°C~150°C
Current - Average Rectified (Io) 3A DC
Reverse Recovery Time 35 ns
Peak Reverse Current 10μA
Max Repetitive Reverse Voltage (Vrrm) 200V
Peak Non-Repetitive Surge Current 60A

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