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TRS8E65C,S1Q

Toshiba Semiconductor and Storage
RoHS
RoHS RoHS compliant
Package TO-220-2
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description Schottky Diodes & Rectifiers SiC Schottky 650V 90uA 1.70V IF 8A
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Inventory: 78
Minimum: 1
Total Price: USD $4.23
Unit Price: USD $4.2294
≥1 USD $4.2294
≥10 USD $3.470303
≥100 USD $3.361575
≥500 USD $3.252848
≥1000 USD $3.145118

Technical Details

Supply Chain

Factory Lead Time 12 Weeks

Technical

Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 175°C
Min Operating Temperature -55°C
Element Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 90μA @ 650V
Voltage - Forward (Vf) (Max) @ If 1.7V @ 8A
Forward Current 8A
Operating Temperature - Junction 175°C Max
Voltage - DC Reverse (Vr) (Max) 650V
Current - Average Rectified (Io) 8A DC
Forward Voltage 1.7V
Max Reverse Voltage (DC) 650V
Average Rectified Current 8A
Reverse Recovery Time 0ns
Peak Reverse Current 90μA
Max Repetitive Reverse Voltage (Vrrm) 650V
Capacitance @ Vr, F 44pF @ 650V 1MHz
Peak Non-Repetitive Surge Current 40A
Max Forward Surge Current (Ifsm) 40A

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-220-2
Number of Pins 2
Supplier Device Package TO-220-2L
Weight 6.000006g

Compliance

Radiation Hardening No
RoHS Status RoHS Compliant

Alternative Model

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