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DLN10C-BT

ON Semiconductor
RoHS
/
Package R-1, Axial
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 200V 1A AXIAL
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Technical Details

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case R-1, Axial
Diode Element Material SILICON

Compliance

RoHS Status RoHS Compliant

Technical

Packaging Tape & Reel (TR)
Published 1998
JESD-609 Code e6
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
ECCN Code EAR99
Terminal Finish Tin/Bismuth (Sn/Bi)
HTS Code 8541.10.00.80
Terminal Form WIRE
JESD-30 Code O-PALF-W2
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Speed Fast Recovery =< 500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 10μA @ 200V
Voltage - Forward (Vf) (Max) @ If 980mV @ 1A
Case Connection ISOLATED
Operating Temperature - Junction 150°C Max
Output Current-Max 1A
Voltage - DC Reverse (Vr) (Max) 200V
Max Reverse Voltage (DC) 200V
Average Rectified Current 1A
Reverse Recovery Time 35 ns

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