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1N8032-GA

GeneSiC Semiconductor
RoHS
/
Package TO-257-3
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description Schottky Diodes & Rectifiers 650V, 5A, 225 Deg C
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-257-3

Technical

Packaging Tube
Published 2013
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
HTS Code 8541.10.00.80
Subcategory Rectifier Diodes
Base Part Number 1N8032
Operating Temperature (Max) 250°C
Number of Elements 1
Element Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 5μA @ 650V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 2.5A
Forward Current 2.5A
Operating Temperature - Junction -55°C~250°C
Output Current-Max 8A
Forward Voltage 1.7V
Max Reverse Voltage (DC) 650V
Average Rectified Current 2.5A
Reverse Recovery Time 0ns
Max Repetitive Reverse Voltage (Vrrm) 650V
Capacitance @ Vr, F 274pF @ 1V 1MHz
Max Forward Surge Current (Ifsm) 32A
Natural Thermal Resistance 3.4 °C/W

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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