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1N8026-GA

GeneSiC Semiconductor
RoHS
/
Package TO-257-3
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description Schottky Diodes & Rectifiers 1200V, 5A, 225 Deg C
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Inventory: 7590
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Technical Details

Supply Chain

Factory Lead Time 24 Weeks

Physical

Mount Through Hole
Mounting Type Through Hole
Package / Case TO-257-3
Supplier Device Package TO-257

Technical

Packaging Tube
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number 1N8026
Element Configuration Single
Speed No Recovery Time > 500mA (Io)
Diode Type Silicon Carbide Schottky
Current - Reverse Leakage @ Vr 10μA @ 1200V
Voltage - Forward (Vf) (Max) @ If 1.6V @ 2.5A
Forward Current 2.5A
Operating Temperature - Junction -55°C~250°C
Voltage - DC Reverse (Vr) (Max) 1200V
Current - Average Rectified (Io) 8A DC
Forward Voltage 1.6V
Max Reverse Voltage (DC) 1.2kV
Average Rectified Current 2.5A
Reverse Recovery Time 0 s
Max Repetitive Reverse Voltage (Vrrm) 1.2kV
Capacitance @ Vr, F 237pF @ 1V 1MHz
Max Forward Surge Current (Ifsm) 30A
Natural Thermal Resistance 3.4 °C/W

Compliance

RoHS Status Non-RoHS Compliant
Lead Free Contains Lead

Alternative Model

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