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1SS193S,LF(D

Toshiba Semiconductor and Storage
RoHS
/
Package TO-236-3, SC-59, SOT-23-3
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 80V 100MA SMINI
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case TO-236-3, SC-59, SOT-23-3
Diode Element Material SILICON

Technical

Packaging Tape & Reel (TR)
Published 2014
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
HTS Code 8541.10.00.70
Terminal Position DUAL
Terminal Form GULL WING
JESD-30 Code R-PDSO-G3
Operating Temperature (Max) 125°C
Number of Elements 1
Configuration SINGLE
Power Dissipation-Max 0.15W
Speed Small Signal =< 200mA (Io), Any Speed
Diode Type Standard
Current - Reverse Leakage @ Vr 500nA @ 80V
Voltage - Forward (Vf) (Max) @ If 1.2V @ 100mA
Operating Temperature - Junction 125°C Max
Output Current-Max 0.1A
Voltage - DC Reverse (Vr) (Max) 80V
Max Reverse Voltage (DC) 80V
Average Rectified Current 100mA
Reverse Recovery Time 4 ns
Capacitance @ Vr, F 3pF @ 0V 1MHz

Compliance

RoHS Status RoHS Compliant

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