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JANTXV1N5554US

Microsemi Corporation
RoHS
/
Package SQ-MELF, B
Category Discrete Semiconductor Products / Diodes - Rectifiers - Single
Description DIODE GEN PURP 1KV 3A B-MELF
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Technical Details

Physical

Mount Surface Mount
Mounting Type Surface Mount
Package / Case SQ-MELF, B
Number of Pins 2
Diode Element Material SILICON

Compliance

Radiation Hardening No
RoHS Status Non-RoHS Compliant

Technical

Packaging Bulk
Published 1997
Series Military, MIL-PRF-19500/420
JESD-609 Code e0
Part Status Discontinued
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 2
Terminal Finish Tin/Lead (Sn/Pb)
Max Operating Temperature 175°C
Min Operating Temperature -65°C
HTS Code 8541.10.00.80
Terminal Position END
Terminal Form WRAP AROUND
Peak Reflow Temperature (Cel) 235
Time@Peak Reflow Temperature-Max (s) 20
Pin Count 2
Qualification Status Qualified
Number of Elements 1
Element Configuration Single
Speed Standard Recovery >500ns, > 200mA (Io)
Diode Type Standard
Current - Reverse Leakage @ Vr 1μA @ 1000V
Voltage - Forward (Vf) (Max) @ If 1.3V @ 9A
Case Connection ISOLATED
Forward Current 5A
Operating Temperature - Junction -65°C~175°C
Output Current-Max 3A
Application POWER
Voltage - DC Reverse (Vr) (Max) 1000V
Current - Average Rectified (Io) 3A
Number of Phases 1
Reverse Recovery Time 2 μs
Peak Reverse Current 1μA
Max Repetitive Reverse Voltage (Vrrm) 1kV
Peak Non-Repetitive Surge Current 100A

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