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CM50DY-24H

Powerex Inc.
RoHS
/
Package Module
Category Discrete Semiconductor Products / Transistors - IGBTs - Modules
Description IGBT MOD DUAL 1200V 50A H SER
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Technical Details

Physical

Mount Chassis Mount
Mounting Type Chassis Mount
Package / Case Module
Number of Pins 7
Transistor Element Material SILICON

Technical

Operating Temperature -40°C~150°C TJ
Published 1998
Series IGBTMOD?
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 7
Subcategory Insulated Gate BIP Transistors
Max Power Dissipation 400W
Terminal Position UPPER
Terminal Form UNSPECIFIED
Number of Elements 2
Configuration Half Bridge
Case Connection ISOLATED
Power - Max 400W
Transistor Application MOTOR CONTROL
Polarity/Channel Type N-CHANNEL
Input Standard
Collector Emitter Voltage (VCEO) 3.4V
Max Collector Current 50A
Current - Collector Cutoff (Max) 1mA
Collector Emitter Breakdown Voltage 1.2kV
Voltage - Collector Emitter Breakdown (Max) 1200V
Input Capacitance 10nF
Vce(on) (Max) @ Vge, Ic 3.4V @ 15V, 50A
NTC Thermistor No
Gate-Emitter Voltage-Max 20V
Input Capacitance (Cies) @ Vce 10nF @ 10V

Compliance

RoHS Status Non-RoHS Compliant

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